AOC2412 20v n-channel mosfet general description product summary v ds i d (at v gs =4.5v) 4.5a r ds(on) (at v gs =4.5v) < 23m w r ds(on) (at v gs =2.5v) < 26m w r ds(on) (at v gs =1.8v) < 30m w typical esd protection hbm class 3a symbol the AOC2412 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 8v v gs(max) rating. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v top view bottom view pin1(g) g s 2 3 1 4 d d mcsp 1.57x1.57_4 top view bottom view g d s symbol v ds v gs t a =25c i d i dm t a =25c p d t j , t stg symbol t 10s steady-state note 1. mounted on minimum pad pcb note 2. pw <300 s pulses, duty cycle 0.5% max 0.55 c/w maximum junction-to-ambient a d 230 maximum junction-to-ambient a c thermal characteristics typ drain-source voltage 20 a 4.5 65 v 8 gate-source voltage source current (pulse) note2 v maximum units parameter max junction and storage temperature range -55 to 150 source current (dc) note1 power dissipation note1 c/w r q ja 140 190 170 units parameter w rev 0 : nov. 2012 www.aosmd.com page 1 of 5
AOC2412 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.4 0.7 1.0 v 18 23 t j =125c 22.5 29 20 26 m w 22 30 m w g fs 30 s v sd 0.65 1 v c iss 1842 pf c oss 245 pf c rss 70 pf r g 2.7 k w q g 21.5 32 nc q gs 10.5 nc q gd 4.5 nc t d(on) 2.5 m s t r 4 m s t d(off) 5 m s t f 8 m s t rr 20 ns q rr 10 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage i d =250 m a, v gs =0v v gs =4.5v, i d =1.5a reverse transfer capacitance i f =1.5a, di/dt=100a/ m s v gs =0v, v ds =10v, f=1mhz switching parameters v ds =v gs i d =250 m a v ds =0v, v gs =8v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =1.5a v gs =2.5v, i d =1a v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =4.5v, v ds =10v, i d =1.5a gate source charge gate drain charge gate resistance v gs =1.8v, i d =1a body diode reverse recovery charge i f =1.5a, di/dt=100a/ m s input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =4.5v, v ds =10v, r l =6.67 w , r gen =3 w rev 0: nov. 2012 www.aosmd.com page 2 of 5
AOC2412 typical electrical and thermal characteristics 0 10 20 30 40 50 60 70 0 1 2 3 4 i d (a) v gs (volts) figure 2: transfer characteristics 0 10 20 30 40 0 1 2 3 4 5 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =1.8v i d =1a v gs =4.5v i d =1.5a v gs =2.5v i d =1a 25 c 125 c v ds =5v v gs =1.8v v gs =4.5v 0 10 20 30 40 50 60 70 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =1.5v 2.0v 4.5v 2.5v v gs =2.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 15 20 25 30 35 0 1 2 3 4 5 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =1.5a 25 c 125 c rev 0: nov. 2012 www.aosmd.com page 3 of 5
AOC2412 typical electrical and thermal characteristics 0 1 2 3 4 5 6 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =1.5a 0 10 20 30 40 50 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t j(max) =150 c t a =25 c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 10: single pulse power rating junction - to - ambient operating area 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =230 c/w rev 0: nov. 2012 www.aosmd.com page 4 of 5
AOC2412 rev 0: nov. 2012 www.aosmd.com page 5 of 5
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